Dr. Tarek Lutz

Werdegang mit den wichtigsten Stationen

2012 - heute  NMI, Projektleiter Nanoanalytik, Leiter des NMI Nanoanalyselabors, Physiker

2007-2012  Senior Experimental Officer, Marie-Curie Senior Research Fellow (EU/FP7), CRANN/Trinity College, Dublin, Irland

2005-2007  Ingenieur, Physik, Qimonda, Dresden, Deutschland

2004-2005 Senior Researcher, Physiker, Infineon, Cooperate Research (CPR) München, Deutschland

1999-2004  Ingenieur, Physiker, Infineon, Mask House, München, Deutschland

1997-1999  Physiker; Masterstudent, NMI Reutlingen, Deutschland

1997-1998  Kleindiek Nanotechnik, Reutlingen, Deutschland

2007-2012 Trinity College Dublin, Dublin, Dublin, Irland
Kontakt-Schnittstellenstudien von Metall- und Kohlenstoffelektroden zu Germanium-Nanodrähten, Kohlenstoff-Nanoröhren und dünnen Kohlenstoffschichten in zugehörigen Geräten".
Doktorarbeit an der School of Physics am Trinity College in Dublin (Irland)

1997-1998 Universität Tübingen, Tübingen, Deutschland
"Zielpräparationsstrategien mit Hilfe der Focused Ion Beam Technique (FIB) zur Untersuchung interner Schnittstellen in der Transmissionselektronenmikroskopie".
Masterarbeit am Bosch-Forschungszentrum und am Naturwissenschaftlichen und Medizinischen Institut (NMI)

1998-1997 Universität Tübingen, Tübingen, Deutschland

Publikationen, die nicht am NMI entstanden sind:

Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires; MM Koleśnik-Gray, T Lutz, G Collins, S Biswas, JD Holmes, V Krstić; Applied Physics Letters 103 (15), 153101    9    2013

Fabrication of a sub-10 nm silicon nanowire based ethanol sensor using block copolymer lithography;
S Rasappa, D Borah, CC Faulkner, T Lutz, MT Shaw, JD Holmes, ...; Nanotechnology 24 (6), 065503    22    2013

Contact Interface Studies of Metal and Carbon Electrodes to Germanium Nanowires, Carbon Nanotubes and Thin Carbon Films in Associated Devices; T Lutz; Trinity College Dublin        2013

Free-Standing, Single-Crystal Cu3Si Nanowires; SJ Jung, T Lutz, AP Bell, EK McCarthy, JJ Boland; Crystal Growth & Design 12 (6), 3076-3081    22    2012

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly; RA Farrell, NT Kinahan, S Hansel, KO Stuen, N Petkov, MT Shaw, ...; Nanoscale 4 (10), 3228-3236    51    2012

Resolving In Situ Specific‐Contact, Current‐Crowding, and Channel Resistivity in Nanowire Devices: A Case Study with Silver Nanowires; MM Koleśnik, S Hansel, T Lutz, N Kinahan, M Boese, V Krstić; Small 7 (20), 2873-2877    11    2011

Anisotropic etching induced by surface energy driven agglomeration; S Jung Jung, T Lutz, JJ Boland; Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5 …    7    2011

Surface energy driven agglomeration and growth of single crystal metal wires; SJ Jung, T Lutz, M Boese, JD Holmes, JJ Boland; letters 11 (3), 1294-1299    13    2011

Nanoscale mapping of electrical resistivity and connectivity in graphene strips and networks; PN Nirmalraj, T Lutz, S Kumar, GS Duesberg, JJ Boland; Nano letters 11 (1), 16-22    91    2010

Transparent ultrathin conducting carbon films; M Schreiber, T Lutz, GP Keeley, S Kumar, M Boese, S Krishnamurthy, ...; Applied Surface Science 256 (21), 6186-6190    30    2010

An investigation of the electrical properties of pyrolytic carbon in reduced dimensions: Vias and wires; AP Graham, G Schindler, GS Duesberg, T Lutz, W Weber; Journal of Applied Physics 107 (11), 114316    22    2010

Transparent ultrathin conducting carbon films; M BOESE, GS DUESBERG, T LUTZ, S KUMAR; Applied Surface Science;        2010

Gas phase controlled deposition of high quality large-area graphene films; S Kumar, N McEvoy, T Lutz, GP Keeley, V Nicolosi, CP Murray, WJ Blau, ...; Chemical communications 46 (9), 1422-1424    44    2010

CVD Growth of Nanocarbons for Device Applications; N Mc Evoy, S Kumar, T Lutz, G Keeley, W Blau, G Duesberg; Meeting Abstracts, 2213-2213        2009

Low temperature graphene growth; S Kumar, N McEvoy, T Lutz, G Keeley, N Whiteside, W Blau, GS Duesberg; ECS Transactions 19 (5), 175-181    7    2009

One-and Two-Dimensional Carbon Nanostructures for applications in Microelectronic Devices and Electrochemical Sensors; G Keeley, T Lutz, N McEvoy, S Kumar, M Schreiber, N Whiteside, ...; Meeting Abstracts, 1313-1313        2009

Fabrication of all-Carbon Nanodevices; T Lutz, S Krishnamurthy, M Schreiber, G Keeley, GS Duesberg; Meeting Abstracts, 2135-2135        2008

Process for producing a mask; T Lutz, J Schneider; US Patent 7,410,732        2008

Integration of EBDW of one entire metal layer as substitution for optical lithography in 220 nm node microcontrollers; J Kretz, H Roeper, C Arndt, T Bischoff, KH Choi, G Goldbeck, M Gunia, ...; Microelectronic Engineering 85 (5-6), 792-795    9    2008

Determination of best focus and optimum dose for variable shaped e-beam systems by applying the isofocal dose method; K Keil, KH Choi, C Hohle, J Kretz, T Lutz, L Bettin, M Boettcher, ...; Microelectronic Engineering 85 (5-6), 778-781    6    2008

Evaluation of hybrid lithography and mix and match scenarios for electron beam direct write applications; C Hohle, C Arndt, KH Choi, J Kretz, T Lutz, F Thrum, K Keil; Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …    8    2007

Apparatus and method for determining physical properties of a mask blank; T Lutz, M Menath; US Patent 7,289,231        2007

CD control of direct versus complementary exposure for shaped beam writers and its correlation to the local registration error; F Thrum, KH Choi, T Lutz, C Hohle, C Arndt, M Tesauro, MT Bootsmann, ...; Microelectronic engineering 84 (5-8), 1033-1036    3    2007

Fabrication of a nano-scale NAND memory array based on a SONOS Fin-FET cell using e-beam lithography and hydrogen-silsesquioxane resist; T Lutz, M Specht, L Risch, C Friederich, L Dreeskornfeld, J Kretz, ...; Microelectronic engineering 84 (5-8), 1578-1580    7    2007

Defect inspection of positive and negative sub-60nm resist pattern printed with variable shaped E-Beam direct write lithography; C Arndt, C Hohle, J Kretz, T Lutz, M Richter, K Keil, M Lapidot, D Zemach, ...; Emerging Lithographic Technologies XI 6517, 651711        2007

Data preparation for EBDW; F Thrum, J Kretz, T Lutz, K Keil, C Arndt, KH Choi, U Baetz, N Belic, ...; Mask and Lithography Conference (EMLC), 2007 23rd European, 1-8    3    2007

Multi-level p+ tri-gate SONOS NAND string arrays; C Friederich, M Specht, T Lutz, F Hofmann, L Dreeskornfeld, W Weber, ...; Electron Devices Meeting, 2006. IEDM'06. International, 1-4    17    2006

Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method; J Schneider, T Lutz; US Patent 7,087,910    5    2006

Comparison of trimming techniques for sub-lithographic silicon structures; L Dreeskornfeld, AP Graham, J Hartwich, J Kretz, E Landgraf, T Lutz, ...; Japanese journal of applied physics 45 (6S), 5552    5    2006

Influence of crystal orientation and body doping on trigate transistor performance; E Landgraf, W Rösner, M Städele, L Dreeskornfeld, J Hartwich, ...; Solid-state electronics 50 (1), 38-43    46    2006

Comparison of trimming techniques for sub-lithographic silicon structures; L Dreeskornfeld, AP Graham, J Hartwich, E Landgraf, T Lutz, W Rosner, ...; Microprocesses and Nanotechnology Conference, 2005 International, 152-153        2005

Method for compensating for scatter/reflection effects in particle beam lithography; C Ebi, F Erber, T Franke, F Gans, T Lutz, G Ruhl, B Schönherr; US Patent 6,953,644    1    2005

Planar double gate transistors with asymmetric independent gates; G Ilicali, W Weber, W Rosner, L Dreeskornfeld, J Hartwich, J Kretz, T Lutz, ...; SOI Conference, 2005. Proceedings. 2005 IEEE International, 126-127    10    2005

Comparative study of calixarene and HSQ resist systems for the fabrication of sub-20 nm MOSFET device demonstrators; J Kretz, L Dreeskornfeld, G Ilicali, T Lutz, W Weber; Microelectronic engineering 78, 479-483    19    2005

Investigation of Low Damage Mask Repair by Combination of Electron Beam and Scanning Force Technology; C Burkhardt, S Bauerdick, V Bucher, W Barth, A Ehrmann, T Lutz, J Rau, ...; Micro and Nano Engineering    1    2002

FOx-12 flowable oxide ; L Dreeskornfeld, AP Graham, J Hartwich, J Kretz, E Landgraf, T Lutz, ...;

Proc. Micro-and Nano Engineering 2005 Proc. Micro-and Nano Engineering 2005, 2005; L Dreeskornfeld, AP Graham, J Hartwich, J Kretz, E Landgraf, T Lutz, ...

IEDM Tech. Dig., 2004 IEDM Tech. Dig., 2004, 2004; L Dreeskornfeld, AP Graham, J Hartwich, J Kretz, E Landgraf, T Lutz, ...

Dr. Tarek Lutz
T +49 (0)7121 51530-900


  • Transmission Electron Microscopy Study on the Precipitation Behaviors of Laser-Welded Ferritic Stainless Steels and Their Implications on Intergranular Corrosion Resistance
    Sommer N, Warres C, Lutz T, Kahlmeyer M, Böhm S
    Metals. 2022; 12(1):86. https://doi.org/10.3390/met12010086
  • Characterisation of elastic-plastic material characteristics of Sn solid solution, SbSn and Cu6Sn5 in the tin-based sliding bearing alloy SnSb12Cu6ZnAg
    Sous C, Jacobs G, Lutz T
    Materials Science and Engineering. 2018 May; 724: 566-575.